GB/T 29508-2013
300 mm monocrystalline silicon as cut slices and grinded slices (English Version)
- Standard No.
- GB/T 29508-2013
- Language
- Chinese, Available in English version
- Release Date
- 2013
- Published By
- General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
- Status
- Latest
- GB/T 29508-2013
- Replace By
- ABNT NBR 14519-2011
- Scope
- This standard specifies the terms, definitions and technical requirements for silicon single crystal cutting and grinding wafers (referred to as silicon wafers) with a diameter of 300 mm, p-type, <100> crystal orientation, and a resistivity of 0.5Ω·cm~20Ω·cm. , test methods, inspection rules and signs, packaging, transportation, storage, etc. This standard is applicable to circular silicon wafers prepared by cutting and grinding Czochralski single crystals with a diameter of 300 mm. The products will be further processed into polished wafers for the production of substrate wafers for integrated circuit ICs with a line width of 90 nm.
GB/T 29508-2013 Referenced Document
- GB/T 11073 Standard method for measuring radial resistivity variation on silicon slices
- GB/T 13388 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques
- GB/T 14140 Test method for measuring diameter of semiconductor wafer
- GB/T 14264 Semiconductor materials-Terms and definitions
- GB/T 1550 Test methods for conductivity type of extrinsic semiconducting materials*， 2018-12-28 Update
- GB/T 1551 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method*， 2021-05-21 Update
- GB/T 1554 Testing method for crystallographic perfection of silicon by preferential etch techniques
- GB/T 1555 Method for Determination of Crystalline Orientation of Semiconductor Single Crystal*， 2023-08-06 Update
- GB/T 1557 Test method for determining interstitial oxygen content in silicon by infrared absorption*， 2018-09-17 Update
- GB/T 1558 Infrared absorption test method for substituted carbon content in silicon*， 2023-12-28 Update
- GB/T 26067 Standard test method for dimensions of notches on silicon wafers
- GB/T 2828.1 Inspection procedure by count sampling part 1: Lot by lot inspection sampling plan retrieved by acceptance quality limit (AQL)
- GB/T 29504 300 mm monocrystalline silicon
- GB/T 29507 Test method for measuring flatness,thickness and total thickness variation on silicon wafers.Automated non-contact scanning
- GB/T 6616 Non-contact eddy current method for testing semiconductor wafer resistivity and semiconductor film sheet resistance*， 2023-08-06 Update
- GB/T 6624 Standard method for measuring the surface quality of polished silicon slices by visual inspection
- YS/T 26 Silicon wafer edge contour inspection method*， 2016-07-11 Update
GB/T 29508-2013 history
- 2013 GB/T 29508-2013 300 mm monocrystalline silicon as cut slices and grinded slices
GB/T 29508-2013 300 mm monocrystalline silicon as cut slices and grinded slices was changed to ABNT NBR 14519-2011 Electronic electricity meters - Specification.
