GB/T 1554-2009
Testing method for crystallographic perfection of silicon by preferential etch techniques (English Version)

Standard No.

GB/T 1554-2009

Language

Chinese, Available in English version

Release Date

2009

Published By

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China

Latest

GB/T 1554-2009

Replace

GB/T 1554-1995

Scope

This standard specifies the method for testing the integrity of silicon crystals by preferential etching techniques. This standard applies to primary defects in silicon single crystal ingots or wafers with crystal orientation <111>, <100> or <110>, resistivity 10Ω•m～10Ω•m, and dislocation density between 0cm～10cm inspection. This method is also applicable to silicon single wafers.

GB/T 1554-2009 Referenced Document

• GB/T 14262-1993 Methods for sampling and sample preparation of flotation lead concentrates in bulk
• YS/T 209-1994 In-situ defect map of silicon materials

GB/T 1554-2009 history

• 2009 GB/T 1554-2009 Testing method for crystallographic perfection of silicon by preferential etch techniques
• 1995 GB/T 1554-1995 Test method for crystallographic perfection of silicon by preferential etch techniques