GB/T 29504-2013 (English Version) PDF

Standard No.: GB/T 29504-2013
Language: Chinese, Available in English version
Release Date: 2013
Published By: General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Latest: GB/T 29504-2013

Scope: This standard specifies the technical requirements, test methods, inspection rules, marking, packaging, transportation, storage, etc. This standard applies to silicon single crystals prepared by the Czochralski method, and is mainly used to produce 300 mm silicon single crystal polished wafers that meet the technical requirements of integrated circuit ICs with a line width of 0.13 µm or less.

GB/T 29504-2013 Referenced Document

GB/T 11073-2007 Standard method for measuring radial resistivity variation on silicon slices
GB/T 14140 Test method for measuring diameter of semiconductor wafer
GB/T 14264 Semiconductor materials-Terms and definitions
GB/T 1550 Test methods for conductivity type of extrinsic semiconducting materials*， 2018-12-28 Update
GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicom
GB/T 1554 Testing method for crystallographic perfection of silicon by preferential etch techniques
GB/T 1555 Method for Determination of Crystalline Orientation of Semiconductor Single Crystal*， 2023-08-06 Update
GB/T 1557 Test method for determining interstitial oxygen content in silicon by infrared absorption*， 2018-09-17 Update
GB/T 1558 Infrared absorption test method for substituted carbon content in silicon*， 2023-12-28 Update
YS/T 679 Surface photovoltage method for measuring minority carrier diffusion length in extrinsic semiconductors*， 2018-10-22 Update