GB/T 29507-2013
Test method for measuring flatness,thickness and total thickness variation on silicon wafers.Automated non-contact scanning (English Version)

Standard No.
GB/T 29507-2013
Language
Chinese, Available in English version
Release Date
2013
Published By
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Latest
GB/T 29507-2013
Scope
This standard specifies the test for the flatness, thickness and total thickness change of silicon wafers with a diameter not less than 50 mm and a thickness not less than 100 μm for cutting, grinding, corrosion, polishing, epitaxy or other surface states. This standard is non-destructive, Non-contact automatic scanning test method, suitable for flatness and thickness testing of clean and dry silicon wafers, and is not affected by changes in the thickness of the silicon wafer, surface state and shape of the silicon wafer,

GB/T 29507-2013 Referenced Document

  • GB/T 14264 Semiconductor materials-Terms and definitions

GB/T 29507-2013 history

  • 2013 GB/T 29507-2013 Test method for measuring flatness,thickness and total thickness variation on silicon wafers.Automated non-contact scanning
Test method for measuring flatness,thickness and total thickness variation on silicon wafers.Automated non-contact scanning



Copyright ©2024 All Rights Reserved