GB/T 29507-2013 Test method for measuring flatness,thickness and total thickness variation on silicon wafers.Automated non-contact scanning (English Version)
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
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GB/T 29507-2013
Scope
This standard specifies the test for the flatness, thickness and total thickness change of silicon wafers with a diameter not less than 50 mm and a thickness not less than 100 μm for cutting, grinding, corrosion, polishing, epitaxy or other surface states. This standard is non-destructive, Non-contact automatic scanning test method, suitable for flatness and thickness testing of clean and dry silicon wafers, and is not affected by changes in the thickness of the silicon wafer, surface state and shape of the silicon wafer,
GB/T 29507-2013 Referenced Document
GB/T 14264 Semiconductor materials-Terms and definitions
GB/T 29507-2013 history
2013GB/T 29507-2013 Test method for measuring flatness,thickness and total thickness variation on silicon wafers.Automated non-contact scanning