GB/T 26069-2010
Specification for silicon annealed wafers (English Version)
- Standard No.
- GB/T 26069-2010
- Language
- Chinese, Available in English version
- Release Date
- 2011
- Published By
- General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
- Status
- 2022-10
- Replace By
- GB/T 26069-2022
- Latest
- GB/T 26069-2022
- Scope
- This standard specifies the requirements, test methods, and inspection rules for silicon annealed and polished wafers used in the manufacture of semiconductor devices and integrated circuits. This standard applies to annealed silicon wafers with line widths of 180nm, 130nm and 90nm.
GB/T 26069-2010 Referenced Document
- GB/T 11073 Standard method for measuring radial resistivity variation on silicon slices
- GB/T 13387 Test method for measuring flat length wafers of silicon and other electronic materials
- GB/T 13388 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques
- GB/T 14140 Test method for measuring diameter of semiconductor wafer
- GB/T 14144 Testing method for determination of radial interstitial oxygen variation in silicon
- GB/T 14264 Semiconductor materials-Terms and definitions
- GB/T 1550 Test methods for conductivity type of extrinsic semiconducting materials*， 2018-12-28 Update
- GB/T 1554 Testing method for crystallographic perfection of silicon by preferential etch techniques
- GB/T 1555 Method for Determination of Crystalline Orientation of Semiconductor Single Crystal*， 2023-08-06 Update
- GB/T 1557 Test method for determining interstitial oxygen content in silicon by infrared absorption*， 2018-09-17 Update
- GB/T 19921 Test method for particles on polished silicon wafer surfaces*， 2018-12-28 Update
- GB/T 24578 Test method for measuring surface metal contamination on silicon wafers by total reflection X-Ray fluorescence spectroscopy*， 2015-12-10 Update
- GB/T 2828.1 Inspection procedure by count sampling part 1: Lot by lot inspection sampling plan retrieved by acceptance quality limit (AQL)*， 2013-02-15 Update
- GB/T 4058 Test method for detection of oxidation induced defects in polished silicon wafers
- GB/T 6616 Non-contact eddy current method for testing semiconductor wafer resistivity and semiconductor film sheet resistance*， 2023-08-06 Update
- GB/T 6618 Test method for thickness and total thickness variation of silicon slices
- GB/T 6620 Test method for measuring warp on silicon slices by noncontact scanning
- GB/T 6621 Testing methods for surface flatness of silicon slices
- GB/T 6624 Standard method for measuring the surface quality of polished silicon slices by visual inspection
- YS/T 26 Silicon wafer edge contour inspection method*， 2016-07-11 Update
GB/T 26069-2010 history
- 2022 GB/T 26069-2022 Annealed monocrystalline silicon wafers
- 2011 GB/T 26069-2010 Specification for silicon annealed wafers
