This standard specifies the grades and classifications, requirements, test methods, inspection rules, marking, packaging, transportation, storage, quality certificates and order (or contract) contents of silicon single crystal etched wafers. This standard applies to silicon single crystal grinding sheets prepared by Czochralski method and suspended zone melting method (including zone melting neutron transmutation and gas phase doping), and acid-etched sheets and alkali-etched sheets prepared by removing the surface damage layer with chemical etching liquid ( Hereinafter referred to as corrosion film). The products are mainly used to make semiconductor components such as transistors, rectifiers, ultra-high power thyristors, and optoelectronic devices, or are further processed into polished silicon wafers.
YS/T 1167-2016 Referenced Document
GB/T 11073 Standard method for measuring radial resistivity variation on silicon slices
GB/T 12962 Silicon single crystal*， 2017-01-01 Update
GB/T 12965 Monocrystalline silicon as cut wafers and lapped wafers*， 2018-09-17 Update
GB/T 13387 Test method for measuring flat length wafers of silicon and other electronic materials
GB/T 13388 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques
GB/T 14140 Test method for measuring diameter of semiconductor wafer
GB/T 14264 Semiconductor materials-Terms and definitions
GB/T 14844 Designations of semiconductor materials*， 2018-12-28 Update
GB/T 1550 Test methods for conductivity type of extrinsic semiconducting materials*， 2018-12-28 Update
GB/T 1555 Method for Determination of Crystalline Orientation of Semiconductor Single Crystal*， 2023-08-06 Update
GB/T 20503 Anodizing of aluminium and its alloys. Measurement of specular reflectance and specular gloss at angles of 20°,45°,60°or 85°
GB/T 26067 Standard test method for dimensions of notches on silicon wafers
GB/T 2828.1 Inspection procedure by count sampling part 1: Lot by lot inspection sampling plan retrieved by acceptance quality limit (AQL)
GB/T 29505 Test method for measuring surface roughness on planar surfaces of silicon wafer
GB/T 30453 Metallographs collection for original defects of crystalline silicon
GB/T 6616 Non-contact eddy current method for testing semiconductor wafer resistivity and semiconductor film sheet resistance*， 2023-08-06 Update
GB/T 6618 Test method for thickness and total thickness variation of silicon slices
GB/T 6620 Test method for measuring warp on silicon slices by noncontact scanning