General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Latest
GB/T 30453-2013
Scope
This standard gives the terminology and morphological feature maps of various native defects and closely related induced defects of silicon materials such as silicon polycrystalline, silicon single crystal, silicon wafer and silicon epitaxial wafer. The causes and elimination methods are analyzed. This standard is applicable to the inspection of various defects in the production research of silicon polycrystalline silicon, silicon single crystal, silicon wafer and silicon epitaxial wafer. Production research of silicon devices and integrated circuits can also refer to this standard.
GB/T 30453-2013 Referenced Document
GB/T 14264 Semiconductor materials-Terms and definitions
GB/T 1554 Testing method for crystallographic perfection of silicon by preferential etch techniques
GB/T 4058 Test method for detection of oxidation induced defects in polished silicon wafers
GB/T 30453-2013 history
2013GB/T 30453-2013 Metallographs collection for original defects of crystalline silicon