GB/T 30854-2014 (English Version) PDF

Standard No.: GB/T 30854-2014
Language: Chinese, Available in English version
Release Date: 2014
Published By: General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Latest: GB/T 30854-2014

Scope: This standard specifies the requirements, inspection methods and rules, marking, packaging, transportation, storage, quality certificate and order form (or contract) for GaN-based epitaxial wafers (hereinafter referred to as epitaxial wafers) for LED lighting. This standard applies to gallium nitride-based epitaxial wafers for LED lighting.

GB/T 30854-2014 Referenced Document

GB/T 13387 Test method for measuring flat length wafers of silicon and other electronic materials
GB/T 14140 Test method for measuring diameter of semiconductor wafer
GB/T 14142 Test method for crystallographic perfection of epitaxial layers in silicon—Etching technique*， 2017-09-29 Update
GB/T 14264 Semiconductor materials-Terms and definitions
GB/T 14844 Designations of semiconductor materials*， 2018-12-28 Update
GB/T 191 Packaging.Pictorial marking for handling of goods
GB/T 2828.1 Inspection procedure by count sampling part 1: Lot by lot inspection sampling plan retrieved by acceptance quality limit (AQL)
GB/T 4326 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
GB/T 6618 Test method for thickness and total thickness variation of silicon slices
GB/T 6619 Test method for bow of silicon wafers
GB/T 6620 Test method for measuring warp on silicon slices by noncontact scanning
SJ/T 11399 Measurement methods for chips of light emitting diodes