IEC 60747-9:2007
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
- Standard No.
- IEC 60747-9:2007
- Release Date
- 2007
- Published By
- International Electrotechnical Commission (IEC)
- Status
- Replace By
- IEC 60747-9:2019
- Latest
- IEC 60747-9:2019
- Replace
- IEC 60747-9 AMD 1:2001 IEC 60747-9:1998 IEC 47E/333/FDIS:2007 IEC 60747-9 Edition 1.1:2001
- Scope
- This part of IEC 60747 gives product specific standards for terminology，letter symbols， essential ratings and characteristics，verification of ratings and methods of measurement for insulated—gate bipolar transistors(IGBTs)．
IEC 60747-9:2007 Referenced Document
- IEC 60747-1:2006 Semiconductor devices - Part 1: General
- IEC 60747-2 Semiconductor devices - Part 2: Discrete devices - Rectifier diodes*， 2016-04-01 Update
- IEC 60747-6 Semiconductor devices - Part 6: Thyristors*， 2016-04-01 Update
- IEC 61340 Electrostatics - Part 6-1: Electrostatic control for healthcare - General requirements for facilities*， 2018-09-24 Update
IEC 60747-9:2007 history
- 2019 IEC 60747-9:2019 Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
- 2007 IEC 60747-9:2007 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
- 1970 IEC 60747-9:1998/AMD1:2001 Amendment 1 - Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
- 2001 IEC 60747-9:2001 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
- 1998 IEC 60747-9:1998 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
