IEC 60747-9:2001
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
- Standard No.
- IEC 60747-9:2001
- Release Date
- 2001
- Published By
- International Electrotechnical Commission (IEC)
- Status
- 2007-09
- Replace By
- IEC 60747-9:1998/AMD1:2001
- Latest
- IEC 60747-9:2019
- Scope
- This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics and measuring methods for insulated-gate bipolar transistors (IGBTs).
IEC 60747-9:2001 history
- 2019 IEC 60747-9:2019 Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
- 2007 IEC 60747-9:2007 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
- 1970 IEC 60747-9:1998/AMD1:2001 Amendment 1 - Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
- 2001 IEC 60747-9:2001 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
- 1998 IEC 60747-9:1998 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
