IEC 60747-9:1998
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)

Standard No.

IEC 60747-9:1998

Release Date

1998

Published By

International Electrotechnical Commission (IEC)

Status

Withdraw 2007-09

Replace By

IEC 60747-9:2001

Latest

IEC 60747-9:2019

Replace

IEC 47E/109/FDIS:1998

IEC 60747-9:1998 history

• 2019 IEC 60747-9:2019 Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
• 2007 IEC 60747-9:2007 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
• 2001 IEC 60747-9/AMD1:2001 Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs); Amendment 1
• 2001 IEC 60747-9:2001 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
• 1998 IEC 60747-9:1998 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)