IEC 60747-9/AMD1:2001
Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs); Amendment 1

Standard No.
IEC 60747-9/AMD1:2001
Release Date
2001
Published By
International Electrotechnical Commission (IEC)
Status
 2007-09
Replace By
IEC 60747-9:2007
Latest
IEC 60747-9:2019
Replace
IEC 47E/194/FDIS:2001
Scope
This standard is Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs); Amendment 1.

IEC 60747-9/AMD1:2001 history

  • 2019 IEC 60747-9:2019 Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
  • 2007 IEC 60747-9:2007 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
  • 1970 IEC 60747-9:1998/AMD1:2001 Amendment 1 - Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
  • 2001 IEC 60747-9:2001 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
  • 1998 IEC 60747-9:1998 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)

IEC 60747-9/AMD1:2001 Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs); Amendment 1 was changed to IEC 60747-9:2007 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs).




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