IEC 60747-9:1998/AMD1:2001
Amendment 1 - Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs)

Standard No.

IEC 60747-9:1998/AMD1:2001

Release Date

1970

Published By

SCC

Status

Be replaced 2007-09

Replace By

IEC 60747-9:2007

Latest

IEC 60747-9:2019

Replace

31.080.30

IEC 60747-9:1998/AMD1:2001 history

• 2019 IEC 60747-9:2019 Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
• 2007 IEC 60747-9:2007 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
• 1970 IEC 60747-9:1998/AMD1:2001 Amendment 1 - Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
• 2001 IEC 60747-9:2001 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
• 1998 IEC 60747-9:1998 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)