This specification specifies the technical requirements, inspection methods and inspection rules for the photoelectric properties, mechanical properties and environmental performance of silicon phototransistors (hereinafter referred to as "devices"). This specification applies to the 3DU series of silicon phototransistors.
SJ/T 2217-2014 Referenced Document
GB/T 11499-2001 Letter symbols for discrete semiconductor devices
GB/T 12565-1990 Semiconductor devices--Sectional specification for optoelectronic devices
GB/T 15651 Semiconductor devices. Discrete devices and integrated circuits. Part 5: Optoelectronic devices
GB/T 2423.1 Environmental testing for electric and electronic products.Part 2:Test methods.Tests A:Cold
GB/T 2423.2 Environmental testing for electric and electronic products.Part 2:Test methods.Tests B:Dry heat
GB/T 2828.1-2003 Sampling procedures for inspection by attributes--Part 1: Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection
GB/T 4589.1-2006 Semiconductor devices. Part 10: Generic specification for discrete devices and integrated circuits
GB/T 4937 Mechanical and climatic test methods for semiconductor devices
SJ/T 2214-2015 Measuring methods for semiconductor photodiode and phototransistor*， 2015-04-30 Update
SJ/T 2217-2014 history
2014SJ/T 2217-2014 Technical specification for phototransistor of silicon