GB/T 30856-2014 (English Version) PDF

Standard No.: GB/T 30856-2014
Language: Chinese, Available in English version
Release Date: 2014
Published By: General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Latest: GB/T 30856-2014

Scope: This standard specifies the requirements, inspection methods and rules, marking, packaging, transportation, storage, quality certificate and order form (or contract) for gallium arsenide single crystal substrates (hereinafter referred to as substrates) for LED epitaxial chips. This standard applies to gallium arsenide single crystal substrates for LED epitaxial chips.

GB/T 30856-2014 Referenced Document

GB/T 13387 Test method for measuring flat length wafers of silicon and other electronic materials
GB/T 13388 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques
GB/T 14140 Test method for measuring diameter of semiconductor wafer
GB/T 14264 Semiconductor materials-Terms and definitions
GB/T 14844 Designations of semiconductor materials*， 2018-12-28 Update
GB/T 1555 Method for Determination of Crystalline Orientation of Semiconductor Single Crystal*， 2023-08-06 Update
GB/T 191 Packaging.Pictorial marking for handling of goods
GB/T 2828.1 Inspection procedure by count sampling part 1: Lot by lot inspection sampling plan retrieved by acceptance quality limit (AQL)
GB/T 4326 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
GB/T 6616 Non-contact eddy current method for testing semiconductor wafer resistivity and semiconductor film sheet resistance*， 2023-08-06 Update
GB/T 6618 Test method for thickness and total thickness variation of silicon slices
GB/T 6620 Test method for measuring warp on silicon slices by noncontact scanning
GB/T 6621 Testing methods for surface flatness of silicon slices
GB/T 6624 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 8760 Test method for dislocation density of monocrystal gallium arsenide*， 2020-09-29 Update