GB/T 12965-2005 (English Version) PDF

Standard No.: GB/T 12965-2005
Language: Chinese, Available in English version
Release Date: 2005
Published By: General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Status: Be replaced 2019-06
Replace By: GB/T 12965-2018
Latest: GB/T 12965-2018
Replace: GB/T 12965-1996

Scope: This standard specifies the product classification, terminology, technical requirements, test methods, inspection rules, signs, packaging, transportation, storage, etc. of silicon single crystal cutting and grinding wafers (silicon wafers for short). This standard applies to circular silicon wafers prepared by cutting and double-sided grinding from Czochralski, suspension zone melting and neutron transmutation doped silicon single crystals. The products are mainly used to make semiconductor devices such as transistors and rectifier devices, or to be further processed into polished wafers.

GB/T 12965-2005 Referenced Document

GB/T 1550 Test methods for conductivity type of extrinsic semiconducting materials*， 2018-12-28 Update
GB/T 1552 Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array
GB/T 1554 Testing method for crystallographic perfection of silicon by preferential etch techniques*， 2009-10-30 Update
GB/T 1555 Method for Determination of Crystalline Orientation of Semiconductor Single Crystal*， 2023-08-06 Update
GB/T 2828.1 Inspection procedure by count sampling part 1: Lot by lot inspection sampling plan retrieved by acceptance quality limit (AQL)*， 2013-02-15 Update