GB/T 26068-2010 (English Version) PDF

Standard No.: GB/T 26068-2010
Language: Chinese, Available in English version
Release Date: 2011
Published By: General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Status: Be replaced 2019-11
Replace By: GB/T 26068-2018
Latest: GB/T 26068-2018

Scope: This method is suitable for measuring the carrier recombination lifetime of uniformly doped and polished n-type or p-type silicon wafers. This method is a non-destructive, non-contact measurement. Under the condition that the sensitivity of the conductivity detection system is sufficient, the method can also be applied to test the carrier recombination lifetime of cut or ground or corroded silicon wafers. 2 The lower limit of the room temperature resistivity of the tested silicon wafer is determined by the sensitivity limit of the detection system, usually between 0.05•cm and 1Ω•cm. 3 Analysis of the process, examination of contamination sources, and interpretation of measurement data to identify the formation mechanism and nature of impurity centers are outside the scope of this method. This method can identify the process of introducing contamination and identify some individual impurity types only under very limited conditions, for example, by comparing the carrier life test values before and after a specific process.

GB/T 26068-2010 Referenced Document

GB/T 11446.1 Electronic grade water*， 2013-12-31 Update
GB/T 13389 Practice for conversion between resistivity and dopant density for boron-doped, phosphorus-doped, and arsenic-doped silicon*， 2014-12-31 Update
GB/T 14264 Semiconductor materials-Terms and definitions
GB/T 1550 Test methods for conductivity type of extrinsic semiconducting materials*， 2018-12-28 Update
GB/T 1552 Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array
GB/T 1553-2009 Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconduetivity decay
GB/T 6616 Non-contact eddy current method for testing semiconductor wafer resistivity and semiconductor film sheet resistance*， 2023-08-06 Update
GB/T 6618 Test method for thickness and total thickness variation of silicon slices
YS/T 679-2008 Test methods for minority carrier diffusion length in extrinsic semiconductors by measurement of steady-state surface photovoltage

2019 GB/T 26068-2018 Measurement of Carrier Recombination Lifetime of Silicon Wafer and Ingot Non-contact Microwave Reflection Photoconductivity Decay Method
2011 GB/T 26068-2010 Test method for carrier recombination lifetime in silicon wafers by non-contact measurement of photoconductivity decay by microwave reflectance