ASTM F1725-97
Standard Guide for Analysis of Crystallographic Perfection of Silicon Ingots
- Standard No.
- ASTM F1725-97
- Release Date
- 1997
- Published By
- American Society for Testing and Materials (ASTM)
- Status
- Replace By
- ASTM F1725-02
- Latest
- ASTM F1725-02
- Scope
1.1 This practice covers the analysis of the crystallographic perfection in silicon ingots. The steps described are sample preparations, etching solution selection and use, defect identification, and defect counting.
1.2 This practice is suitable for use if evaluating silicon grown in either (111) or (100) direction and doped either p or n type with resistivity greater than 0.005 Omega cm.
1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
ASTM F1725-97 Referenced Document
- ASTM D5127 Standard Guide for Ultra Pure Water Used in the Electronics and Semiconductor Industry*， 1999-04-19 Update
- ASTM F1241
- ASTM F1809 Standard Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in Silicon
- ASTM F1810
- ASTM F26
- ASTM F523 Standard Practice for Unaided Visual Inspection of Polished Silicon Wafer Surfaces
ASTM F1725-97 history
- 1970 ASTM F1725-02
- 1997 ASTM F1725-97 Standard Guide for Analysis of Crystallographic Perfection of Silicon Ingots
