ASTM F1725-02 PDF

Scope: Full Description This standard was transferred to SEMI (www.semi.org) May 20031.1 This practice covers the analysis of the crystallographic perfection in silicon ingots. The steps described are sample preparation, etching solution selection and use, defect identification, and defect counting.1.2 This practice is suitable for use if evaluating silicon grown in either [111] or [100] direction and doped either p or n type with resistivity greater than 0.005 Ωcm.1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

ASTM F1725-02 Referenced Document

ASTM C18
ASTM C28 Standard Specification for Gypsum Plasters*， 1980-04-22 Update
ASTM C35 Standard Specification for Inorganic Aggregates for Use in Gypsum Plaster*， 1995-04-22 Update
ASTM D5127 Standard Guide for Ultra Pure Water Used in the Electronics and Semiconductor Industry*， 1999-04-22 Update
ASTM F1241
ASTM F1809 Standard Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in Silicon*， 1997-04-22 Update
ASTM F1810
ASTM F26
ASTM F523 Standard Practice for Unaided Visual Inspection of Polished Silicon Wafer Surfaces*， 1993-04-22 Update

1970 ASTM F1725-02
1997 ASTM F1725-97 Standard Guide for Analysis of Crystallographic Perfection of Silicon Ingots