ASTM F950-98
Standard Test Method for Measuring the Depth of Crystal Damage of a Mechanically Worked Silicon Slice Surface by Angle Polishing and Defect Etching

Standard No.
ASTM F950-98
Release Date
1998
Published By
American Society for Testing and Materials (ASTM)
Status
Replace By
ASTM F950-02
Latest
ASTM F950-02
Scope

1.1 This test method describes a technique to measure the depth of damage, on or beneath the surface of silicon wafers prior to any heat treatment of the wafer. Such damage results from mechanical surface treatments such as sawing, lapping, grinding, sandblasting, and shot peening.

1.2 The principal application of this test method is for determining the depth of damage of the non-polished back surface that has had intentionally added work damage.

1.3 The measurement is destructive since a specimen is prepared from a section of a silicon wafer.

1.4 Depth of damage can be measured in the range of 5.0 to 200 [mu]m using this method.

1.5 For referee purposes, a sampling plan shall be agreed upon between the parties to the test before the tests are started.

1.6 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 9.

ASTM F950-98 Referenced Document

  • ASTM D1193 Standard Specification for Reagent Water*1999-04-19 Update
  • ASTM E122 Standard Practice for Calculating Sample Size to Estimate, With a Specified Tolerable Error, the Average for Characteristic of a Lot or Process*2000-10-10 Update
  • ASTM F532 
  • ASTM F672 Standard Test Method for Measuring Resistivity Profiles Perpendicular to the Surface of a Silicon Wafer Using a Spreading Resistance Probe

ASTM F950-98 history

  • 1970 ASTM F950-02
  • 1998 ASTM F950-98 Standard Test Method for Measuring the Depth of Crystal Damage of a Mechanically Worked Silicon Slice Surface by Angle Polishing and Defect Etching
Standard Test Method for Measuring the Depth of Crystal Damage of a Mechanically Worked Silicon Slice Surface by Angle Polishing and Defect Etching



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