ASTM F950-02 PDF

Scope: Full Description This standard was transferred to SEMI (www.semi.org) May 20031.1 This test method describes a technique to measure the depth of damage, on or beneath the surface of silicon wafers prior to any heat treatment of the wafer. Such damage results from mechanical surface treatments such as sawing, lapping, grinding, sandblasting, and shot peening.1.2 The principal application of this test method is for determining the depth of damage of the non-polished back surface that has had intentionally added work damage.1.3 The measurement is destructive since a specimen is prepared from a section of a silicon wafer.1.4 Depth of damage can be measured in the range of 5.0 to 200 m using this method.1.5 This test method is intended for use in process control where each individual location is resposible to determine the internal repeatability to its satisfaction.1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific warnings and hazard statements are given in and Section 9.

ASTM F950-02 Referenced Document

ASTM C28 Standard Specification for Gypsum Plasters*， 1980-04-22 Update
ASTM D5127 Standard Guide for Ultra Pure Water Used in the Electronics and Semiconductor Industry*， 1999-04-22 Update
ASTM E122 Standard Practice for Calculating Sample Size to Estimate, With a Specified Tolerable Error, the Average for Characteristic of a Lot or Process*， 2000-10-10 Update
ASTM F532
ASTM F672 Standard Test Method for Measuring Resistivity Profiles Perpendicular to the Surface of a Silicon Wafer Using a Spreading Resistance Probe*， 1988-04-22 Update

1970 ASTM F950-02
1998 ASTM F950-98 Standard Test Method for Measuring the Depth of Crystal Damage of a Mechanically Worked Silicon Slice Surface by Angle Polishing and Defect Etching