GB/T 20230-2006 (English Version) PDF

Standard No.: GB/T 20230-2006
Language: Chinese, Available in English version
Release Date: 2006
Published By: General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Status: Be replaced 2022-10
Replace By: GB/T 20230-2022
Latest: GB/T 20230-2022

Scope: This standard specifies the grades, technical requirements, test methods, inspection rules, signs, packaging, transportation, storage, etc. of n-type, semi-insulating (Si), and p-type indium phosphide single crystal ingots and single wafers. This standard applies to indium phosphide single crystal materials (hereinafter referred to as single crystals) prepared by the high-pressure liquid seal Czochralski method (HP-LEC).

GB/T 20230-2006 Referenced Document

GB/T 13387 Test method for measuring flat length wafers of silicon and other electronic materials*， 2009-10-30 Update
GB/T 1550 Test methods for conductivity type of extrinsic semiconducting materials*， 2018-12-28 Update
GB/T 1555 Method for Determination of Crystalline Orientation of Semiconductor Single Crystal*， 2023-08-06 Update
GB/T 4326 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient*， 2006-07-18 Update
GB/T 6618 Test method for thickness and total thickness variation of silicon slices*， 2009-10-30 Update