This standard specifies the grades, technical requirements, test methods, inspection rules, signs, packaging, transportation, storage, etc. of non-doped, S-doped, and Te-doped n-type gallium phosphide single crystal ingots and single wafers. This standard applies to gallium phosphide single crystal materials (hereinafter referred to as single crystals) prepared by the high-pressure liquid seal Czochralski method (HP-LEC).
GB/T 20229-2006 Referenced Document
GB/T 1550 Test methods for conductivity type of extrinsic semiconducting materials*, 2018-12-28 Update
GB/T 1555 Method for Determination of Crystalline Orientation of Semiconductor Single Crystal*, 2023-08-06 Update
GB/T 4326 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient*, 2006-07-18 Update
GB/T 6618 Test method for thickness and total thickness variation of silicon slices*, 2009-10-30 Update
GJB 3076 Gallium Phosphide Single Chip Specification