GB/T 12962-2005 (English Version) PDF

Standard No.: GB/T 12962-2005
Language: Chinese, Available in English version
Release Date: 2005
Published By: General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Status: Be replaced 2017-01
Replace By: GB/T 12962-2015
Latest: GB/T 12962-2015
Replace: GB/T 12962-1996

Scope: 1.1 This standard specifies the product classification, terminology, technical requirements, test methods, inspection rules, marking, packaging, transportation and storage of silicon single crystals. 1.2 This standard is applicable to products prepared by Czochralski and levitation zone fusion neutron transmutation doping, which are mainly used to make semiconductor components.

GB/T 12962-2005 Referenced Document

GB/T 1550 Test methods for conductivity type of extrinsic semiconducting materials*， 2018-12-28 Update
GB/T 1551 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method*， 2021-05-21 Update
GB/T 1552 Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array
GB/T 1553 Determination of Minority Carrier Lifetime in Silicon and Germanium by Photoconductivity Decay Method*， 2023-08-06 Update
GB/T 1554 Testing method for crystallographic perfection of silicon by preferential etch techniques*， 2009-10-30 Update