- Standard No.
- GB/T 6495.4-1996
- Language
- Chinese, Available in English version
- Release Date
- 1996
- Published By
- General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
- Latest
-
GB/T 6495.4-1996
- Replace
-
GB 6493-1986
GB 6495-1986
- Scope
- This standard specifies the temperature and irradiance correction methods for IV measured characteristics of crystalline silicon photovoltaic devices, including the determination of temperature coefficient, internal series resistance and curve correction coefficient. These methods are applicable within ±30% of the irradiance used for testing. NOTE 1 These methods are only applicable to linear devices. 2 Photovoltaic devices include single solar cells, solar cell combinations or flat-panel components. Various data apply to various devices. Although the temperature coefficient of a component (or battery combination) can be calculated by measuring a single battery, it should be noted that the internal series resistance and curve correction coefficient of the component or battery combination should be measured separately. 3 The term "sample" is used to denote any of these devices.
GB/T 6495.4-1996 history
- 1996 GB/T 6495.1-1996 Photovoltaic devices. Part 1: Measurement of photovoltaic current-voltage characteristics
- 1986 GB 6495-1986 Measurement procedures for electrical characteristics of terrestrial solar cells
GB/T 6495.4-1996 Procedures for temperature and irradiance corrections to measured I-V characteristics of crystalline silicon photovoltaic devices has been changed from GB 6493-1986 Terrestrial standard solar cell.
GB/T 6495.4-1996 Procedures for temperature and irradiance corrections to measured I-V characteristics of crystalline silicon photovoltaic devices has been changed from GB 6495-1986 Measurement procedures for electrical characteristics of terrestrial solar cells.