ASTM F110-00a PDF

Scope: Full Description This standard was transferred to SEMI (www.semi.org) May 20031.1 This test method covers a procedure suitable for interlaboratory comparisons of layer thickness. This test method is applicable for layers of any resistivity so long as the layer differs from the silicon substrate under it either in conductivity type or in resistivity by at least one order of magnitude. The method described is destructive in nature but is more widely applicable than the alternate infrared method, Test Method F95. 1.2 For layers with thicknesses between 1 and 25 µm, an interlaboratory precision as defined in Practice E177, of +(0.15 T + 0.5 µm) (3S) can be achieved where T represents thickness expressed in micrometres. 1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 8.

ASTM F110-00a Referenced Document

ASTM C28 Standard Specification for Gypsum Plasters*， 1980-04-22 Update
ASTM C35 Standard Specification for Inorganic Aggregates for Use in Gypsum Plaster*， 1995-04-22 Update
ASTM E177 Standard Practice for Use of the Terms Precision and Bias in ASTM Test Methods*， 1990-04-22 Update
ASTM F42 Standard Test Methods for Conductivity Type of Extrinsic Semiconducting Materials*， 1993-04-22 Update
ASTM F95