ASTM F95-89(2000) PDF

Scope: Full Description This standard was transferred to SEMI (www.semi.org) May 20031.1 This test method provides a technique for the measurement of the thickness of epitaxial layers of silicon deposited on silicon substrates. A dispersive infrared spectrophotometer is used. For this measurement, the resistivity of the substrate must be less than 0.02[omega] cm at 23oC and the resistivity of the layer must be greater than 0.1[omega] cm at 23oC.1.2 This technique is capable of measuring the thickness of both n- and p-type layers greater than 2 µm thick. With reduced precision, the technique may also be applied to both n- and p-type layers from 0.5 to 2 µm thick.1.3 This test method is suitable for referee measurements.1.4This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

ASTM F95-89(2000) Referenced Document

ASTM E177 Standard Practice for Use of the Terms Precision and Bias in ASTM Test Methods*， 1990-04-20 Update
ASTM E932 Standard Practice for Describing and Measuring Performance of Dispersive Infrared Spectrometers*， 2021-04-01 Update
ASTM F84