GB/T 11094-2020
Gallium arsenide single crystal and cutting wafer grown by horizontal bridgman method (English Version)

Standard No.
GB/T 11094-2020
Language
Chinese, Available in English version
Release Date
2020
Published By
国家市场监督管理总局、中国国家标准化管理委员会
Latest
GB/T 11094-2020
Replace
GB/T 11094-2007
Scope
This standard specifies the requirements for grades and classifications of the horizontal-method front arsenide (hereinafter referred to as the arsenide front) and cutting pieces. Test methods, inspection rules, signs, packaging, transportation, storage, quality certificates and order sheets (or contract) content. This standard is applicable to zinc arsenide single crystals and cutting chips used in optoelectronic devices and sensing elements.

GB/T 11094-2020 Referenced Document

  • GB/T 13388 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques
  • GB/T 14264 Semiconductor materials-Terms and definitions
  • GB/T 14844 Designations of semiconductor materials
  • GB/T 1555 Method for Determination of Crystalline Orientation of Semiconductor Single Crystal*2023-08-06 Update
  • GB/T 2828.1 Inspection procedure by count sampling part 1: Lot by lot inspection sampling plan retrieved by acceptance quality limit (AQL)
  • GB/T 4326 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
  • GB/T 8760 Test method for dislocation density of monocrystal gallium arsenide

GB/T 11094-2020 history

  • 2020 GB/T 11094-2020 Gallium arsenide single crystal and cutting wafer grown by horizontal bridgman method
  • 2007 GB/T 11094-2007 Horizontal bridgman grown gallium arsenide single crystal and cutting wafer
  • 1989 GB/T 11094-1989 Boat-grown gallium arsenide single crystals and As-cut slices
Gallium arsenide single crystal and cutting wafer grown by horizontal bridgman method



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