SAE J1752/3-2017 Measurement of Radiated Emissions from Integrated Circuits—TEM/Wideband TEM (GTEM) Cell Method; TEM Cell (150 kHz to 1 GHz), Wideband TEM Cell (150 kHz to 8 GHz)
This measurement procedure defines a method for measuring the electromagnetic radiation from an integrated circuit (IC). The IC being evaluated is mounted on an IC test printed circuit board (PCB) that is clamped to a mating port (referred to as a wall port) cut in the top or bottom of a TEM or wideband TEM (GTEM) cell. The test board is not in the cell as in the conventional usage but becomes a part of the cell wall. This method is applicable to any TEM or GTEM cell modified to incorporate the wall port; however, the measured RF voltage is affected by the septum to test board (wall) spacing. This procedure was developed using a 1 GHz TEM cell with a septum to wall spacing of 45 mm and a GTEM cell with average septum to wall spacing of 45 mm over the port area. Other cells may not produce identical spectral output but may be used for comparative measurements, subject to their frequency and sensitivity limitations.
SAE J1752/3-2017 history
2017SAE J1752/3-2017 Measurement of Radiated Emissions from Integrated Circuits—TEM/Wideband TEM (GTEM) Cell Method; TEM Cell (150 kHz to 1 GHz), Wideband TEM Cell (150 kHz to 8 GHz)
2011SAE J1752/3-2011 Measurement of Radiated Emissions from Integrated Circuits TEM/Wideband TEM (GTEM) Cell Method; TEM Cell (150 kHz to 1 GHz), Wideband TEM Cell (150 kHz to 8 GHz)
2003SAE J1752/3-2003 Measurement of Radiated Emissions from Integrated CircuitsTEM/Wideband TEM (GTEM) Cell Method; TEM Cell (150 kHz to 1 GHz), Wideband TEM Cell (150 kHz to 8 GHz)
1995SAE J1752/3-1995 Measurement of Radiated Emissions From Integrated Circuits-Tem/Wideband Tem (Gtem) Cell Method; Tem Cell (150 Khz to 1 Ghz), Wideband Tem Cell (150 Khz to 8 Ghz)