GB/T 13388-1992
Method for measuring crystallographic orientation of flats on single crystal sillcon slices and wafers by X-ray techniques (English Version)

Standard No.
GB/T 13388-1992
Language
Chinese, Available in English version
Release Date
1992
Published By
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Status
 2010-06
Replace By
GB/T 13388-2009
Latest
GB/T 13388-2009
Scope
This standard specifies the method for measuring the crystallographic orientation of the reference plane of silicon wafers by X-ray technology. This standard is applicable to the measurement of the angular deviation between the crystallographic orientation of the silicon wafer reference plane and the specified orientation of the reference plane. The diameter of the silicon wafer is 50-125 mm, and the length of the reference surface is 10-50 mm. This standard does not apply to the measurement of silicon wafers whose specified orientation is in a plane perpendicular to the reference plane and the surface of the silicon wafer, and the angle between the projection of the silicon wafer surface and the normal line of the silicon wafer surface is not less than 3°.

GB/T 13388-1992 history

  • 2009 GB/T 13388-2009 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques
  • 1992 GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal sillcon slices and wafers by X-ray techniques
Method for measuring crystallographic orientation of flats on single crystal sillcon slices and wafers by X-ray techniques



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