GB/T 14145-1993
Determination of Stacking Fault Density of Silicon Epitaxial Layer by Interference Phase Contrast Microscopy (English Version)

Standard No.

GB/T 14145-1993

Language

Chinese, Available in English version

Release Date

1993

Published By

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China

Status

Withdraw

Latest

GB/T 14145-1993

Scope

This standard specifies the method for the non-destructive measurement of the stacking fault density of silicon epitaxial layers using an interference phase contrast microscope. This standard is applicable to the measurement of the stacking fault density of samples whose silicon epitaxial layer thickness is not less than 3 μm, and the crystal orientation of the epitaxial layer deviates from the {111} crystal plane or the {100} crystal plane with a small angle. When the stacking fault density exceeds 15000cm^-2 or when the crystal orientation of the epitaxial layer deviates from the {111} crystal plane or {100} crystal plane, the measurement accuracy will be reduced.

GB/T 14145-1993 history

• 1993 GB/T 14145-1993 Determination of Stacking Fault Density of Silicon Epitaxial Layer by Interference Phase Contrast Microscopy