GB/T 14142-1993
Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array (English Version)

Standard No.

GB/T 14142-1993

Language

Chinese, Available in English version

Release Date

1993

Published By

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China

Status

Be replaced 2018-04

Replace By

GB/T 14142-2017

Latest

GB/T 14142-2017

Scope

This standard specifies the methods for displaying by chemical etching and inspecting the crystal defects of silicon epitaxial layer by metallographic microscope. This standard is applicable to the measurement of stacking fault and dislocation density in silicon epitaxial layer. The thickness of the silicon epitaxial layer should be greater than 2μm. The measuring range is 010000cm².

GB/T 14142-1993 history

• 2017 GB/T 14142-2017 Test method for crystallographic perfection of epitaxial layers in silicon—Etching technique
• 1993 GB/T 14142-1993 Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array