GB/T 14141-1993
Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array (English Version)
- Standard No.
- GB/T 14141-1993
- Language
- Chinese, Available in English version
- Release Date
- 1993
- Published By
- General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
- Status
- 2010-06
- Replace By
- GB/T 14141-2009
- Latest
- GB/T 14141-2009
- Scope
- This standard specifies the method for measuring the sheet resistance of silicon epitaxial layer, diffusion layer and ion implantation layer with in-line four probes. This standard is applicable to the measurement of the average sheet resistance of a thin layer formed on or under the surface of a silicon wafer by epitaxy, diffusion, or ion implantation with a diameter greater than 10.0mm. The conductivity type of the silicon substrate is opposite to that of the thin layer to be measured. For a thin layer with a thickness of 0.2-3μm, the measurement range is 250-5000Ω; for a thin layer with a thickness not less than 3μm, the lower limit of sheet resistance measurement can reach 10Ω.
GB/T 14141-1993 history
- 2009 GB/T 14141-2009 Test method for sheet resistance of silicon epitaxial,diffused and ion-implanted layers using a collinear four-probe array
- 1993 GB/T 14141-1993 Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array
