GB/T 32281-2015 (English Version) PDF

Standard No.: GB/T 32281-2015
Language: Chinese, Available in English version
Release Date: 2015
Published By: General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Latest: GB/T 32281-2015

Scope: This standard specifies the secondary ion mass spectrometry (SIMS) detection method for the content of oxygen, carbon, boron and phosphorus in solar-grade silicon wafers and silicon materials. This standard applies to the detection of the volume content of oxygen, carbon, boron and phosphorus in solar-grade monocrystalline or polycrystalline silicon wafers or silicon materials that do not change with depth and do not consider compensation. The detection limit of each element body content is 0.2% (i.e. <1×10²⁰ atoms/cm³), and the detection limit is ≥5×10¹⁶ atoms/cm ³, carbon content≥1×10¹⁶ atoms/cm³, boron content≥1×10¹⁴ atoms/cm³ and phosphorus content≥2 ×10¹⁴ atoms/cm³. The determination of the body content of the four elements can be completed at one time using a SIMS instrument equipped with a cesium primary ion source.

GB/T 32281-2015 Referenced Document

ASTM E673 Standard Terminology Relating to Surface Analysis
GB/T 14264 Semiconductor materials-Terms and definitions
GB/T 2828.1 Inspection procedure by count sampling part 1: Lot by lot inspection sampling plan retrieved by acceptance quality limit (AQL)

2015 GB/T 32281-2015 Test method for measuring oxygen, carbon, boron and phosphorus in solar silicon wafers and feedstock.Secondary ion mass spectrometry