This standard specifies guidelines for conversion factors for interstitial oxygen in silicon. This standard is suitable for testing the interstitial oxygen content in n-type silicon single crystals with a resistivity greater than 0.1 Ω·cm and p-type silicon single crystals with a resistivity greater than 0.5 Ω·cm at room temperature.
SJ/T 11495-2015 history
2015SJ/T 11495-2015 Guide to conversion factors for interstitial oxygen in silicon