GB/T 30653-2014
Test method for crystal quality of Ⅲ-nitride epitaxial layers (English Version)

Standard No.

GB/T 30653-2014

Language

Chinese, Available in English version

Release Date

2014

Published By

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China

Latest

GB/T 30653-2014

Scope

This standard specifies the method for testing the crystal quality of III-nitride epitaxial wafers by high-resolution X-ray diffractometer. This standard applies to nitrides (Ga, In , Al) N single-layer or multi-layer heterogeneous epitaxial wafer crystallization quality test. The test of crystal quality of other heterogeneous epitaxial wafers can also refer to this standard.

GB/T 30653-2014 history

• 2014 GB/T 30653-2014 Test method for crystal quality of Ⅲ-nitride epitaxial layers