General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
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GB/T 30869-2014
Scope
This standard specifies the discrete and scanning measurement methods for the thickness and total thickness variation of silicon wafers for solar cells (hereinafter referred to as silicon wafers). This standard is applicable to the measurement of the thickness and total thickness change of silicon wafers conforming to the dimensions specified in GB/T 26071 and GB/T 29055. The discrete measurement method is applicable to contact and non-contact measurement, and the scanning measurement method is only applicable to Non-contact measurement. This standard can also be used to measure the thickness and total thickness variation of silicon wafers of other specifications, provided that the measuring instrument permits.
GB/T 30869-2014 Referenced Document
GB/T 26071 Monocrystalline silicon wafers for solar cells*, 2018-09-17 Update
GB/T 29055 Multi crystalline silicon wafers for photovoltaic solar cell*, 2019-06-04 Update
GB/T 30869-2014 history
2014GB/T 30869-2014 Test method for thickness and total thickness variation of silicon wafers for solar cell