IEC 62047-9:2011
Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
- Standard No.
- IEC 62047-9:2011
- Release Date
- 2011
- Published By
- International Electrotechnical Commission (IEC)
- Status
- Replace By
- IEC 62047-9:2011/COR1:2012
- Latest
- IEC 62047-9:2011/COR1:2012
- Replace
- IEC 47F/82/FDIS:2011
- Scope
- This standard describes bonding strength measurement method of wafer to wafer bonding@ type of bonding process such as silicon to silicon fusion bonding@ silicon to glass anodic bonding@ etc.@ and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ?? to several millimeters.
IEC 62047-9:2011 history
- 2012 IEC 62047-9:2011/COR1:2012 Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
- 2011 IEC 62047-9:2011 Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
