GB/T 26070-2010
Characterization of subsurface damage in polished compound semiconductor wafers by reflectance difference spectroscopy method (English Version)

Standard No.

GB/T 26070-2010

Language

Chinese, Available in English version

Release Date

2011

Published By

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China

Latest

GB/T 26070-2010

Scope

This standard specifies the test method for subsurface damage of III-V compound semiconductor single crystal polished wafers. This standard is applicable to the measurement of subsurface damage of GaAs, InP (GaP, GaSb can refer to) and other compound semiconductor single crystal polished wafers.

GB/T 26070-2010 history

• 2011 GB/T 26070-2010 Characterization of subsurface damage in polished compound semiconductor wafers by reflectance difference spectroscopy method