General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
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GB/T 24577-2009
Scope
1.1 This standard specifies the qualitative and quantitative methods of organic pollutants on the surface of silicon wafers, using GC-MS or phosphorus selective detectors or both. 1.2 This standard describes the thermal desorption gas chromatograph (TD-GC) and related procedures for sample preparation and analysis. 1.3 The detection limit range of this standard depends on the organic compound to be detected, for example, the detection range of hydrocarbons (C~C) is 10 g/cm~10 g/cm. 1.4 This standard applies to polished silicon wafers and silicon wafers with oxide layers. 1.5 Two methods are covered in this standard. Method A is suitable for sliced silicon wafers, and method B is suitable for intact silicon wafers. The differences between the two methods are described in detail in Section 7.
GB/T 24577-2009 Referenced Document
ASTM D6196 Standard Practice for Selection of Sorbents and Pumped Sampling/Thermal Desorption Analysis Procedures for Volatile Organic Compunds in Air
GB/T 24577-2009 history
2009GB/T 24577-2009 Test methods for analyzing organic contaminants on silicon water surfaces by thermal desorption gas chromatography