GB/T 1558-2009 (English Version) PDF

Standard No.: GB/T 1558-2009
Language: Chinese, Available in English version
Release Date: 2009
Published By: General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Status: Be replaced 2024-07
Replace By: GB/T 1558-2023
Latest: GB/T 1558-2023
Replace: GB/T 1558-1997

Scope: This standard specifies the infrared absorption measurement method for the content of substituting carbon atoms in silicon. This standard is applicable to the determination of the content of substituting carbon atoms in p-type silicon wafers with a resistivity higher than 3Ω•cm and n-type silicon wafers with a resistivity higher than 1Ω•cm. For silicon wafers that do not require high precision, the resistance can be measured The content of substituting carbon atoms in silicon wafers with a rate higher than 0.1Ω·cm. Since carbon may also have interstitial sites, this method cannot determine the total carbon content. It is also applicable to the determination of the content of substituting carbon atoms in polycrystalline silicon, but the carbon in the intergranular region cannot be determined either.

GB/T 1558-2009 Referenced Document

GB/T 14264-2009 Semiconductor materials-Terms and definitions
GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices

2023 GB/T 1558-2023 Infrared absorption test method for substituted carbon content in silicon
2009 GB/T 1558-2009 Test method for substitutional atomic carbon concent of silicon by infrared absorption
1997 GB/T 1558-1997 Test method for substitutional atomic carbon content of silicon by infrared absorption