PN T01505-03-1987
Field-effect transistors Measuring method Drain current, at a specified gate-source voltage Idsx and drain current, with gate short-circuited to source. Idss

Standard No.
PN T01505-03-1987
Release Date
1987
Published By
PL-PKN
Latest
PN T01505-03-1987

PN T01505-03-1987 history

  • 1987 PN T01505-03-1987 Field-effect transistors Measuring method Drain current, at a specified gate-source voltage Idsx and drain current, with gate short-circuited to source. Idss

PN T01505-03-1987 -All Parts

PN T01505-04-1987 Field-effect transistors Measuring method Gate cut-off current Iaso and gate leakage current Igss PN T01505-13-1987 Field-effect transistors Measuring method Short-circuit output admittance y?is and short-circuit output conductance in comrnon source goss PN T01505-15-1987 Field-effect transistors Measuring method Short-circuit forward transter admittance yi\s and short-circuit forward transconductance in common source gms PN T01505-16-1987 Field-effect transistors Measuring method Short-circuit input capacitance in common source CnM PN T01505-17-1987 Field-effect transistors Measuring method Short-circuit utput capacitance in common source C22SS PN T01505-18-1987 Field-effect transistors Measuring method Common souree reverse transfer capacitance with input short-circuited Cl2j.s PN T01505-19-1987 Field-effect transistors Measuring method Noise factor F and equivalent input noise yoltage U?


Copyright ©2023 All Rights Reserved