ASTM F980M-96
Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices [Metric]

Standard No.

ASTM F980M-96

Release Date

1996

Published By

American Society for Testing and Materials (ASTM)

Status

Be replaced

Replace By

ASTM F980M-96(2003)

Latest

ASTM F980-16(2024)

Scope

1.1 This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from neutron radiation. This test will produce degradation of the electrical properties of the irradiated devices and should be considered a destructive test. Rapid annealing of displacement damage is usually associated with bipolar technologies.

1.2 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

ASTM F980M-96 history

• 2024 ASTM F980-16(2024) Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
• 2016 ASTM F980-16 Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
• 2010 ASTM F980-10e1 Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
• 2010 ASTM F980-10 Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
• 1996 ASTM F980M-96(2003) Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices [Metric]
• 1996 ASTM F980M-96 Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices [Metric]
• 1992 ASTM F980-92 Guide for The Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices