This standard describes the procedures for temperature and irradiance corrections to the measured I-V characteristics of crystalline silicon photovoltaic devices. It includes procedures for the determination of temperature coefficients, internal series resistance and curve correction factor. These procedures are applicable over an irradiance range of ± 30% of the level at which the measurements were made.
Notes I. — These procedures are limited to linear devices.
2. — The photovoltaic devices include a single solar cell, a sub-assembly of solar cells, or a flat module. A different
set of values apply for each type of device. Although the determination of temperature coefficients for a module (or sub-assembly of cells) may be calculated from single cell measurements, it should be noted that the internal series resistance and curve correction factor should be separately measured for a module or subassembly of cells,
3. — The term "test specimen" is used to denote any of these devices.
IS 12763-1989 history
1990IS 12763-1989 Procedure for temperature and irradiance correction of measured IV characteristics of crystalline silicon photovoltaic devices