ISO 14706:2000
Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
- Standard No.
- ISO 14706:2000
- Release Date
- 2000
- Published By
- International Organization for Standardization (ISO)
- Status
- Replace By
- ISO 14706:2014
- Latest
- ISO 14706:2014
- Scope
- This International Standard specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces.
The method is applicable to:
— elements of atomic number from 16 (S) to 92 (U);
— contamination elements with atomic surface densities from 1 × 10
atoms/cm to 1 × 10 atoms/cm ; — contamination elements with atomic surface densities from 5 × 10 atoms/cm to 5 × 10 atoms/cm using a VPD (vapour-phase decomposition) specimen preparation method (see 3.4).
ISO 14706:2000 history
- 2014 ISO 14706:2014 Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
- 2000 ISO 14706:2000 Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
