IEC 60747-4-1:2000
Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and transistors; Microwave field effect transistors; Blank detail specification

Standard No.
IEC 60747-4-1:2000
Release Date
2000
Published By
International Electrotechnical Commission (IEC)
Status
Latest
IEC 60747-4-1:2000
Scope
The IEC electronic component quality assessment system follows the IEC charter and works under the authorization of 1EC. The purpose of this system is to determine quality assessment procedures in such a way that electronic components released by one participating country in accordance with relevant specifications can be equally accepted by all other participating countries without further testing. This blank detail specification is one of a series of blank detail specifications for semiconductor devices and should be used in conjunction with the following national standards. GB/T 4589.1-2006 Semiconductor devices Part 10: General specifications for discrete devices and integrated circuits (1EC 60747-10: 1991, 1DT) GB/T 12560-1999 Semiconductor devices Particular specifications for discrete devices (idt IEC 60747-11: 1996) Information required. The numbers in square brackets on this page and the following page correspond to the information required in the following items. These information should be filled in the corresponding columns. Identification of detailed specifications [1] Name of the national standardization agency authorized to issue detailed specifications. [2] Detailed specification IECQ number. [3] The number and version number of the general specification and sub-standards. [4] Detailed specification’s national number, release date and any information required by the national standard system. Identification of device [5] Type of device. [6] Typical structure and application information. If a device has several applications, this should be stated in the detailed specification. The characteristics, limit values and inspection requirements of these applications shall be met. If the device is electrostatically sensitive or contains hazardous materials such as beryllium oxide, caution should be given in the detailed specification. [7] Appearance drawings and/or references to relevant appearance standards. [8] Quality assessment categories. [9] Reference data for the most important characteristics that can be compared between device models. [In this specification, text given in square brackets is for the guidance of writers of detailed specifications and should not be incorporated into the detailed specifications. ] [In this specification, "×" indicates that the value of the characteristic or rating should be specified in the detailed specification. ]

IEC 60747-4-1:2000 history

  • 2000 IEC 60747-4-1:2000 Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and transistors; Microwave field effect transistors; Blank detail specification



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