DIN 50454-1:2000 Testing of materials for semiconductor technology - Determination of dislocations in monocrystals of III-V-compound semi-conductors - Part 1: Gallium arsenide
The standard specifies a method for the revelation of dislocations in monocrystals, bar-shaped of gallium arsenide specimens with polished, polished-etched, or sawed surfaceoriented in (111)-Ga and (100) crystal planes using structure etching and the determiantion of the density on the surface and the local distrubution of these dislocations.#,,#
DIN 50454-1:2000 history
2000DIN 50454-1:2000 Testing of materials for semiconductor technology - Determination of dislocations in monocrystals of III-V-compound semi-conductors - Part 1: Gallium arsenide