DIN 50449-2:1998 Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 2: Boron in gallium arsenide
The method specified in this document covers the determination of the boron content in gallium arsenide by infrared absorption. It is used for semiisolating single-crystal gallium arsenide with a resistivity greater than 10 cm<(hoch)>6.
DIN 50449-2:1998 history
1998DIN 50449-2:1998 Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 2: Boron in gallium arsenide