This standard specifies a method for measuring the pulse reviscosity lifetime (hereinafter referred to as "pulk lifetime" or τB) of minority carriers in a silicon single crystal using the photoconductive decay method using a DC circuit. The single crystal to be measured must have a uniform composition and a resistivity of lΩ·cm or more.
JIS H 0604:1995 history
1995JIS H 0604:1995 Measuring of minority-carrier lifetime in silicon single crystal by photoconductive decay method