This document specifies the technical requirements, test methods, inspection rules, marking, packaging, transportation, storage, accompanying documents and order form of gallium arsenide single crystal. This document is applicable to gallium arsenide single crystals grown by liquid seal Czochralski method (LEC), vertical gradient solidification method (VGF) and vertical Bridgman method (VB) for the preparation of optoelectronic, microelectronic and other devices. GaAs single crystals suitable for horizontal Bridgman (HB) growth.
GB/T 20228-2021 Referenced Document
GB/T 13388 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques
GB/T 14264 Semiconductor materials-Terms and definitions
GB/T 14844 Designations of semiconductor materials
GB/T 1555 Method for Determination of Crystalline Orientation of Semiconductor Single Crystal*, 2023-08-06 Update
GB/T 4326 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
GB/T 8760 Test method for dislocation density of monocrystal gallium arsenide